HETEROJUNCTION BAND DISCONTINUITY CHANGE BY ULTRATHIN INTRALAYER: Na

20 March 1993

journal article
Published by World Scientific Pub Co Pte Ltd in Modern Physics Letters B

Vol. 7 (7) , 459-464
https://doi.org/10.1142/s021798499300045x

Abstract

The changes of band offset of Ge-GaAs(100) heterojunction are observed by means of an ultrathin Na intralayer with the photoemission spectroscopy. 1 ML Na intralayer increases the valence-band discontinuity of Ge-GaAs by 0.19 eV on the average.

Keywords

VALENCE BAND
PHOTOEMISSION SPECTROSCOPY