Rectification properties and interface states of heterojunctions between solid C60 and n-type GaAs
- 2 December 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (23) , 3557-3559
- https://doi.org/10.1063/1.117244
Abstract
Solid C60/n‐GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)‐oriented epitaxial n‐type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique.Keywords
This publication has 14 references indexed in Scilit:
- Dark and photoconductivity behavior of C60 thin films sandwiched with metal electrodesApplied Physics Letters, 1992
- Steady state photoconductive response of C60/C70 filmsSolid State Communications, 1992
- Photophysical properties of solid films of fullerene, C60Journal of Physics: Condensed Matter, 1991
- Electrical conductivity studies of undoped solid films of C60/70Chemical Physics Letters, 1991
- Superconductivity at 18 K in potassium-doped C60Nature, 1991
- Conducting films of C60 and C70 by alkali-metal dopingNature, 1991
- Solid C60: a new form of carbonNature, 1990
- The infrared and ultraviolet absorption spectra of laboratory-produced carbon dust: evidence for the presence of the C60 moleculeChemical Physics Letters, 1990
- Probing C 60Science, 1988
- C60: BuckminsterfullereneNature, 1985