Indium-doped zinc oxide thin films prepared by rf magnetron sputtering
- 15 September 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (6) , 2400-2401
- https://doi.org/10.1063/1.335962
Abstract
Indium‐doped zinc oxide films have been prepared by rf magnetron sputtering, using ZnO targets containing up to 10 wt. % In2O3. Room temperature resistivity of the deposited films was found to decrease by about four orders of magnitude as the In2O3 content was increased from 0 to 10 wt. %.This publication has 4 references indexed in Scilit:
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- Electrical and optical properties of zinc oxide thin films prepared by rf magnetron sputtering for transparent electrode applicationsJournal of Applied Physics, 1984
- Transparent and highly conductive films of ZnO prepared by rf reactive magnetron sputteringApplied Physics Letters, 1981
- Zinc phosphide-zinc oxide heterojunction solar cellsApplied Physics Letters, 1981