Growth of high quality strained AlxGa1−xAs/In0.26Ga0.74As/AlzGa1−zAs quantum wells and the effect of silicon nitride encapsulation and rapid thermal annealing
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 793-796
- https://doi.org/10.1116/1.586117
Abstract
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