Grain boundary potential determination in polycrystalline silicon by the scanning light spot technique
- 1 March 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (3) , 1301-1305
- https://doi.org/10.1063/1.329755
Abstract
Local grain boundary potential has been determined by scanning light spot technique. Photocurrent peaks vary from boundary to boundary giving a strong peak for large‐angle grain boundaries and becoming negligible for the smallest‐angle grain boundaries observed. The largest potentials had typical values of around 0.3 eV and the corresponding interface state densities were in the 1013 cm−2 range.This publication has 11 references indexed in Scilit:
- On the mobility of polycrystalline semiconductorsSolid-State Electronics, 1980
- Grain boundary states and varistor behavior in silicon bicrystalsApplied Physics Letters, 1979
- pn Junction applications and transport properties in polysilicon rodsSolid-State Electronics, 1979
- Deep traps in polysilicon solar cellsElectronics Letters, 1978
- Determination of diffusion length and surface recombination velocity by light excitationSolid-State Electronics, 1978
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978
- Solar cells from polysilicon rodsElectronics Letters, 1976
- Polycrystalline silicon solar cells on low cost foreign substratesSolar Energy, 1975
- Polycrystalline silicon films on aluminum sheets for solar cell applicationApplied Physics Letters, 1974
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971