Antisite defect in GaAs and at the GaAs–AlAs interface
- 1 September 1981
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 19 (3) , 443-446
- https://doi.org/10.1116/1.571035
Abstract
Calculations are performed of the local densities of states for the As antisite defect and for the ideal Ga vacancy in GaAs, of the changes in their electronic properties near an ideal (100) GaAs–AlAs interface, and of the total interaction energy of these defects with the interface. The calculations were made using a novel recursion approach and are based on tight binding Hamiltonians.Keywords
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