Avalanche drift instability in planar passivated p-n junctions

Publisher Website
Google Scholar
Abstract
Some factors which affect the breakdown voltage of planar passivatedp-njunctions and which influence breakdown drift instability are discussed. Experiments describing these phenomena are reported. An activation energy for walk-out recovery is given as approximately 0.35 eV. It is argued that charge motion parallel to and probably within the oxide-semiconductor interface is occurring. Experiments performed to verify this parallel charge drift are related which confirm the effect. Finally, evidence for a mobile negative species is given.