Simple model for threshold voltage of a nonuniformly doped short-channel MOS transistor

27 May 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (11) , 481-483
https://doi.org/10.1049/el:19820328

Abstract

In this letter a simple geometric model for evaluating the threshold voltage of an ion-implanted short-channel MOS transistor, taking into account the form of the depletion regions around the source and drain p-n junctions, is presented. The model displays good agreement between the theoretical and experimental results and can be employed for sensitivity evaluation and optimisation of the threshold voltage.

Keywords

SEMICONDUCTOR DEVICE MODEL
DRAIN P-N JUNCTIONS
SENSITIVITY EVALUATION
MOSFET
ION-IMPLANTED SHORT-CHANNEL MOS TRANSISTOR
DEPLETION REGIONS
GEOMETRIC MODEL
THRESHOLD VOLTAGE
SOURCE P-N JUNCTION
MOST
OPTIMISATION
NONUNIFORMLY DOPED

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