New ultra high-speed VUG-SIBH laser structure with 2 ps-RC product

1 December 1992

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology

Vol. 10 (12) , 1935-1938
https://doi.org/10.1109/50.202815

Abstract

A new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InP layers was designed. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pF and a series resistance around 3 Omega ; (RC product >

Keywords

EPITAXIAL GROWTH
BANDWIDTH
INDIUM PHOSPHIDE
OPTICAL DESIGN
OPTICAL DEVICE FABRICATION
EPITAXIAL LAYERS
ULTRAVIOLET SOURCES
CAPACITANCE
HIGH SPEED OPTICAL TECHNIQUES
OPTICAL MODULATION

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