Electron-LO-phonon scattering rates in GaAs-AlxGa1-xAs quantum wells
- 1 May 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (5) , 397-400
- https://doi.org/10.1088/0268-1242/6/5/015
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electron–LO-phonon scattering rates in semiconductor quantum wellsPhysical Review B, 1990
- Role of discrete slab phonons in carrier relaxation in semiconductor quantum wellsPhysical Review Letters, 1989
- Electron scattering by confined LO polar phonons in a quantum wellPhysical Review B, 1989
- Folded, confined, interface, surface, and slab vibrational modes in semiconductor superlatticesSuperlattices and Microstructures, 1989
- Dielectric continuum model and Fröhlich interaction in superlatticesPhysical Review B, 1988
- Resonance effect in inter-sub-band transitions of single quantum wellsSemiconductor Science and Technology, 1987
- Phonons in semiconductor superlatticesIEEE Journal of Quantum Electronics, 1986
- Longitudinal polar optical modes in semiconductor quantum wellsJournal of Physics C: Solid State Physics, 1986
- Polar optical interface phonons and Fröhlich interaction in double heterostructuresPhysical Review B, 1984
- Optical Modes of Vibration in an Ionic Crystal SlabPhysical Review B, 1965