Opto-optical switching in the infrared using CdTe

Abstract
Opto-optical switching of a 1.06-μm signal beam by another 1.06-μm control beam has been observed in CdTe:In. The switching is caused by the photocharge created by the control beam and the resultant electric-field shielding. This effect can be switched in microseconds and takes advantage of the high figure of merit (n3r/) of CdTe.