Site-Selective Doping of Compound Semiconductors by Ion Implantation of Radioactive Nuclei

Sn impurity atoms have been selectively inserted on the two different substitutional lattice sites in the III-V semiconductors GaP, GaAs, GaSb, InP, InAs, and InSb. Radioactive ${}_{}{}^{119}{}_{}{}^{}\mathrm{In}_{}^{+}{}_{}{}^{}$ and ${}_{}{}^{119}{}_{}{}^{}\mathrm{Sb}_{}^{+}{}_{}{}^{}$ ions which decay to the Mössbauer state of ${}_{}{}^{119}{}_{}{}^{}\mathrm{Sn}$ have been implanted. From the isomer shifts determined in Mössbauer-emission experiments it is concluded that the implanted In and Sb ions selectively populate III and V sites, respectively.