Quantitative secondary ion mass spectrometry depth profiling of TiSi2 films

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Abstract
This paper reports on an analytical method for the quantitative depth profiling of multilayer samples by secondary ion mass spectrometry (SIMS). This method is applied to SiO2/TiSi2/Si samples containing B and to TiSi2/Si samples containing As. The study involves the dopant redistribution during the self-aligned silicide process, a low-temperature process for 1-μm complementary metal–oxide semiconductor technology. A data processing program was developed which allows the user to input quantitative sensitivity factors and relative sputtering rates for each layer as derived from calibration samples. The processing algorithm converts the dopant (B or As) intensity–time profile to concentration–depth by applying the appropriate sensitivity factor and sputtering rate in each layer. Scaling of sputter rate and sensitivity factor across each interface corrects for transients in sputter ion yields and is accomplished by adjusting values in accordance with the change in the intensity of a matrix specific element. The analytical methodology is discussed for both B and As analyses including the assumptions made during the data acquisition and processing. Correlative sputtered neutral mass spectroscopy and Rutherford backscattering spectroscopy measurements are used to verify SIMS results for B and As, respectively.

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