Dynamics of electric field screening in a bulk GaAs modulator
Open Access
- 15 June 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (23) , 16000-16003
- https://doi.org/10.1103/physrevb.47.16000
Abstract
The transient development of electric-field distributions in a biased GaAs film after low-density optical excitation is determined by measurements of Franz-Keldysh modulations with a time resolution of 100 fs. The experimental results are compared with theoretical calculations. The transient field is calculated with a drift-diffusion model. Our calculation of the dielectric function of GaAs includes the Coulomb coupling and the electric field. The resulting optical transmission changes are calculated with a transfer-matrix method. The theory predicts a modification of the Franz-Keldysh modulation due to the nonuniform field, in quantitative agreement with the experimental observations.Keywords
This publication has 24 references indexed in Scilit:
- A Franz-Keldysh model for photoreflectance from GaAs/GaAlAs heterojunction structuresJournal of Applied Physics, 1992
- Time-resolved ballistic acceleration of electrons in a GaAs quantum-well structurePhysical Review Letters, 1991
- Band-edge photorefractivity in semiconductors: Theory and experimentJournal of Applied Physics, 1991
- Generalized Franz-Keldysh theory of electromodulationPhysical Review B, 1990
- Photoreflectance and the electric fields in a GaAs depletion regionApplied Physics Letters, 1990
- Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectanceApplied Physics Letters, 1990
- Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion regionApplied Physics Letters, 1989
- Femtosecond excitonic optoelectronicsIEEE Journal of Quantum Electronics, 1989
- Subpicosecond excitonic electroabsorption in room-temperature quantum wellsApplied Physics Letters, 1986
- Franz–Keldysh electrorefraction and electroabsorption in bulk InP and GaAsApplied Physics Letters, 1986