High-Frequency Transistor Evaluation by Three-Port Scattering Parameters (Correspondence)
- 1 April 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 15 (4) , 263-265
- https://doi.org/10.1109/TMTT.1967.1126439
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: