Resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure

13 August 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (17) , 870-871
https://doi.org/10.1049/el:19870616

Abstract

A common-emitter current gain of 10 has been measured at 77 K for a 100 nm-base resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure. The current gain for 25 nm-base RHETs has reached 25, which is the highest value yet reported for hot-electron transistors, and the collector current peak-to-valley ratio has reached 15.0 for the same device.

Keywords

GAINAS-ALGAINAS HETEROSTRUCTURE
25 NM
100 NM
COLLECTOR CURRENT PEAK-TO-VALLEY RATIO
RESONANT-TUNNELLING HOT-ELECTRON TRANSISTOR
77 K
CURRENT GAIN
RHET

This publication has 0 references indexed in Scilit: