Laser annealing of ion-implanted indium phosphide

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Abstract
High purity, (001) InP layers grown by vapour phase epitaxy were implanted with S+ or Se+ dopant ions and pulse annealed using radiation from a Q‐switched Ruby laser. Prior to annealing, some of the layers were capped using sputter‐deposited Si3N4. Following annealing, the layers were electrically assessed by van der Pauw and Hall measurements, and structurally studied using electron microscopy. For pulse energy densities from ∠0.06J cm−2 up to ∠0.3J cm−2 the initial amorphous layers recrystallized to give a polycrystalline structure with relatively poor electrical carrier activation. While multiple pulse anneals produced greater electrical activity, layer surface disruption also progressively became evident. For pulse energy densities ≳0.4J cm−2 annealing gave single crystal InP layers with high concentrations of electrical donors. The characteristics of these donors are described and discussed.

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