Hydrogen-induced oxide surface charging in palladium-gate metal-oxide-semiconductor devices
- 15 November 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (10) , 2956-2963
- https://doi.org/10.1063/1.333837
Abstract
Hydrogen-induced oxide surface charging occurs in palladium-gate metal-oxide-semiconductor devices. This has been concluded from high-frequency capacitance-voltage measurements, especially in the inversion region. Measurements of transient currents induced by changes in bias, and microscopic ellipsometry on the oxide surface, support the idea of hydrogen-induced charges. It is concluded that the surface charges are protons.This publication has 11 references indexed in Scilit:
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