Crystalline Morphology and Electrical Properties of Selenium Epitaxilly Grown on Tellurium

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Abstract
Trigonal selenium single crystal was grown epitaxially on (0001) and (101̄0) tellurium substrates by evaporation. The dependence of the crystalline morphology on the substrate temperature and the growth rate has been studied. In the case of (0001) substrate, four kinds of selenium film were obtained: of amorphous, polycrystal of large grain, polycrystal of small grain, and single crystal. The electrical properties of single crystal formed by this method depend on the growth condition. In the best sample obtained in this experiment, the conductivity is 1.5×10-5 Ω-1 cm-1, acceptor density 5×1014 cm-3, and mobility 0.2 cm2 V-1 sec-1. These values are almost equal to those of single crystals grown from vapor or liquid phase. This paper also describes the result of study of the effects of doped bromine and thallium on the crystal growth and electrical properties.