Assessment of Multiple Epilayer III-V Compound Semi-Conductors by Synchrotron Radiation Diffractometry

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Abstract
An extensive programme of characterization of optoelectronic device material has been performed at the Synchrotron Radiation Source, Baresbury Laboratory, in collaboration with Plessey Research, Caswell. The material was grown by Plessey Research by liquid phase epitaxy on InP substrates and had quaternary active layers with, usually, four epilayers in total. Some specimens had graded epilayers. This paper reports use of the methods of double crystal topography, rocking curve analysis and simulation, selective etching and Talysurf measurement in order to develop and assess non-destructive methods of evaluation. The destructive methods above were therefore used in order to test and verify the non-destructive X-ray techniques.

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