1 mW CMOS polyphase channel filter for Bluetooth
- 1 December 2002
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Circuits, Devices and Systems
- Vol. 149 (5) , 348-354
- https://doi.org/10.1049/ip-cds:20020554
Abstract
A polyphase transconductor-capacitor (Gm–C) channel filter for a low-IF Bluetooth transceiver is described. It is designed in a 2.5 V, 0.25 μm standard CMOS process and employs a novel fully differential transconductor. Simulated performance is presented showing good fifth-order bandpass filter response (1 MHz centre frequency, 1.2 MHz bandwidth), 1 dB compression at l.3 V pk–pk, signal-to-noise ratio of 68.2 dB and an input third-order intermodulation product of 34.2 dBV. The power consumption is 1 mW and estimated chip area is 0.1 mm2.Keywords
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