Interface states in the silicon/silicon-oxide system observed by thermally stimulated charge release
- 2 April 1970
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 6 (7) , 207-209
- https://doi.org/10.1049/el:19700148
Abstract
The experiment of thermally stimulated charge release has been used in the m.o.s. capacitor to study electron and hole states in the metal-oxide-silicon system. Broadly similar results have been obtained for ‘wet’ and ‘dry’ oxides on ‘mechanically’ and ‘chemically’ polished silicon surfaces. A representative spectrum is presented showing electron and hole interface states spread over most of the energy band gap.Keywords
This publication has 2 references indexed in Scilit:
- Trapping Levels in the Silicon—Silicon Nitride SystemPhysica Status Solidi (b), 1969
- Photoconductivity of SolidsPhysics Today, 1961