Formation of WSi2at the Si-W(110) interface

Photoemission, Auger, and work-function measurements of room-temperature deposition of Si on W(110) show that Si interacts strongly with W and forms W${\mathrm{Si}}_2$ at the interface. As the formation of W${\mathrm{Si}}_2$ continues with increasing coverages of Si, silicon oxide species accumulate gradually on top of the surface due to the presence of O impurities. These species eventually form a thin oxide layer and hinder the formation of W${\mathrm{Si}}_2$ in the interfacial region.