Reactive ION Beam Etching of GaN Grown By Movpe
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Room-temperature photoenhanced wet etching of GaNApplied Physics Letters, 1996
- Reactive ion etching of GaN using BCl3Applied Physics Letters, 1994
- Interface Recombination Reduction by (NH4)2Sx-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microcavity Surface Emitting LasersJapanese Journal of Applied Physics, 1992
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- InGaAsP/InP Etched Mirror Lasers Fabricated by Inclined RIEJapanese Journal of Applied Physics, 1989
- Low-threshold electrically pumped vertical-cavity surface-emitting microlasersElectronics Letters, 1989
- Surface emitting semiconductor lasersIEEE Journal of Quantum Electronics, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- GaAs and AlGaAs anisotropic fine pattern etching using a new reactive ion beam etching systemJournal of Vacuum Science & Technology B, 1985
- Selective Photoetching of Gallium ArsenideJournal of the Electrochemical Society, 1972