Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells
- 15 September 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 2, No) , L1039-L1040
- https://doi.org/10.1143/jjap.42.l1039
Abstract
We report a pn-junction ultraviolet light-emitting diode (LED) with peak emission at 363 nm using a-plane GaN-AlGaN multiple quantum wells over r-plane sapphire. The peak emission wavelength does not shift with increasing pump currents-therefore establishing the feasibility of high-efficiency non-polar light emitting devices.Keywords
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