Cosmic Ray-Induced Soft Errors in Static MOS Memory Cells
- 1 January 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (6) , 5041-5047
- https://doi.org/10.1109/TNS.1979.4330269
Abstract
Previous analytical models were extended to predict cosmic ray-induced soft error rates in static MOS memory devices. The effect is due to ionization and can be introduced by high energy, heavy ion components of the galactic environment. The results indicate that the sensitivity of memory cells is directly related to the density of the particular MOS technology which determines the node capacitance values. Hence, CMOS is less sensitive than e.g., PMOS. In addition, static MOS memory cells are less sensitive than dynamic ones due to differences in the mechanisms of storing bits. The flip-flop of a static cell is inherently stable against comsic ray-induced bit flips. Predicted error rates on a CMOS RAM and a PMOS shift register are, in general agreement with previous spacecraft flight data.Keywords
This publication has 3 references indexed in Scilit:
- Cosmic Ray Induced in MOS Memory CellsIEEE Transactions on Nuclear Science, 1978
- Satellite Anomalies from Galactic Cosmic RaysIEEE Transactions on Nuclear Science, 1975
- The Transient Response of Transistors and Diodes to Ionizing RadiationIEEE Transactions on Nuclear Science, 1964