Growth of AlxGa1−xN:Ge on sapphire and silicon substrates
- 18 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (12) , 1745-1747
- https://doi.org/10.1063/1.115036
Abstract
AlxGa1−xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room‐temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1−xN epilayers were successfully doped with Ge and free‐electron concentration as high as 3×1019 cm−3 was achieved.Keywords
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