Filamentary injection currents in semi-insulating GaAs

1 November 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 17 (11) , 971-975
https://doi.org/10.1109/T-ED.1970.17109

Abstract

Current filaments have been observed in the post-breakdown region of two-carrier space-charge-limted diodes in silicon and gallium arsenide. An analytical expression for the radial distribution of current in such filaments has been derived using an appropriate model for the total current-electric field problem. This derived expression is solved numerically for semi-insulating GaAs. These analytical results are compared with the experimental observations.

Keywords

MODEL
EXPERIMENTAL
DIODES
FILAMENTS
RADIAL
SEMI INSULATING GAAS