Current Status of SiC Power Switching Devices: Diodes & GTOs

This publication has 6 references indexed in Scilit:

• Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
  IEEE Transactions on Electron Devices, 1999
• Performance limiting surface defects in SiC epitaxial p-n junction diodes
  IEEE Transactions on Electron Devices, 1999
• Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
  IEEE Electron Device Letters, 1997
• Wide Bandgap Semiconductor Power Devices
  MRS Proceedings, 1997
• A high-current and high-temperature 6H-SiC thyristor
  IEEE Electron Device Letters, 1996
• Comparison of 6H-SiC, 3C-SiC, and Si for power devices
  IEEE Transactions on Electron Devices, 1993