Ring oscillators fabricated in laser-annealed silicon-on-insulator

1 June 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (6) , 99-100
https://doi.org/10.1109/EDL.1980.25245

Abstract

Both seven and eleven stage n-MOS ring oscillators with 6 µm channel length have been successfully fabricated in scanning. CW argon laser-annealed polycrystalline silicon islands, which are defined prior to the laser annealing step, on oxide substrates. The ring oscillators, which have a fan-out of three, have a switching delay per stage of 58 nsec and a power-delay product of about 7 pJ operating at a supply voltage (VDD) of 5 volts and switching between VDDand ground. The most serious difficulty encountered during circuit fabrication was the deformation of the silicon islands resulting from laser annealing with extensive laser power density.

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