The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission electron microscope
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 925-930
- https://doi.org/10.1016/0022-0248(91)91109-n
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Convergent beam diffraction studies of interfaces, defects, and multilayersJournal of Electron Microscopy Technique, 1989
- Errors and correction term for holz line simulationsUltramicroscopy, 1989
- Effects of strain on the electron diffraction contrast at III-V compound heterostructure interfacesPhilosophical Magazine A, 1989
- Microdiffraction from Cleaved Si-Si1-xGex MultilayersMRS Proceedings, 1989
- Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffractionApplied Physics Letters, 1987
- Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlatticesJournal of Applied Physics, 1987
- On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1−x.AsyP1−yepitaxial layersPhilosophical Magazine A, 1985
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)Journal of Applied Physics, 1984
- Effect of layer size on lattice distortion in strained-layer superlatticesApplied Physics Letters, 1984
- The determination of foil thickness by scanning transmission electron microscopyPhysica Status Solidi (a), 1975