Quantitative Sub-Micrometer Linewidth Determination Using Electron Microscopy

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Abstract
Quantitative determination of sub-micrometer linewidths in semiconductor devices and masks is demonstrated utilizing an approach employing complementary experimental measurements and theoretical modeling. Experimental measurements are performed utilizing the Microlength Calibrating Electron Probe (MCEP), a new facility at the National Bureau of Standards consisting of a scanning electron microscope modified to incorporate a scanning stage and laser-interferometer position measurement system. Automated data acquisition and analysis for the MCEP are achieved through interfacing to a laboratory minicomputer. Theoretical modeling based on Monte Carlo calculations provides a basis for selection of the position in the experimentally measured backscatter electron intensity profile that corresponds to the actual material line edge. A measurement on a photomask is shown which illustrates the utility of the MCEP facility and the Monte Carlo modeling calculations for accurate measurement of sub-micrometer linewidths.

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