Liquid-phase epitaxial growth of thin GaAs layers from supercooled solutions
- 1 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (3) , 131-133
- https://doi.org/10.1063/1.88380
Abstract
A liquid‐phase epitaxial technique using supercooled solutions free from precipitates has been developed. Excellent surface morphology and a reproducible thickness control of GaAs layers within 7% have been obtained for layer thicknesses at around 0.6 μ. This technique is readily applicable to GaAs field‐effect transistors (FET’s) and other devices.Keywords
This publication has 5 references indexed in Scilit:
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- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970