Time-resolved X-ray diffraction from silicon during pulsed laser annealing
- 15 June 1986
- journal article
- Published by Elsevier in Optics Communications
- Vol. 58 (4) , 269-272
- https://doi.org/10.1016/0030-4018(86)90448-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealingApplied Physics Letters, 1983
- Soft-X-ray spectroscopic diagnostics of laboratory plasmasNuclear Fusion, 1981
- X-ray study of lattice strain in boron implanted laser annealed siliconJournal of Applied Physics, 1980