Surface-emitting GaInAsP/InP injection laser with short cavity length

27 May 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (11) , 461-463
https://doi.org/10.1049/el:19820314

Abstract

We have succeeded in making a surface-emitting GaInAsP/InP injection laser with short cavity length (≅ 10 μm) which operates at 1.22 μm of wavelength with threshold current of 160 mA (33 kA/cm²) at 77 K. No side-emitting mode was observed as a result of preparing long absorbing regions and a small dot electrode (25 μm φ). One of the longitudinal modes, with a spacing of 170 Å, dominated above threshold and the far-field radiation angle was sharp (2Δθ = 10°).

Keywords

GAINASP-INP LASER
FAR-FIELD RADIATION ANGLE
SURFACE EMITTING INJECTION LASER
SEMICONDUCTOR LASER
THRESHOLD CURRENT
LONGITUDINAL MODES
SHORT CAVITY LENGTH
1.22 MICRONS WAVELENGTH

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