Accelerated light degradation of a-Si:H solar cells and its intensity and temperature dependence

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Abstract
The long term kinetics of the light induced degradation of single junction a‐Si:H solar cells was studied by an accelerated test. A simple scaling law for cell degradation was found between the light intensity (I) and the exposure time (t), i.e., I1 . 8t=const. No apparent saturation was observed near the room temperature, even though an AM1.5 equivalent exposure time of over 25,000 hours has been reached using the high intensity light of ∼14 W/cm2. Saturation, however, did occur at higher temperatures and the level of saturation was found to depend on the temperature and the light intensity. These results suggest that the long term stability of a‐Si:H devices is governed by two competing effects, namely the light induced degradation and the thermal annealing.

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