Laser-machined GaP monolithic displays

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Abstract
The feasibility of producing electrically and optically isolated monolithic devices from planar GaP p‐n junction material by the use of laser‐machining techniques has been demonstrated. By machining deep narrow grooves through the p‐n junction and around the areas to be contacted, it is possible to produce monolithic displays without the use of photolithography or critical etching steps. The resultant mesa devices have excellent optical definition and electrical properties. As an illustration of the technique, small (2.5‐mm‐high) monolithic seven‐bar numerics have been fabricated from green‐emitting GaP. This laser‐machining technique should be applicable to other semiconductor materials and devices such as GaAs lasers.

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