Novel vertical Hall cells in standard bipolar technology
- 8 October 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (21) , 1104-1105
- https://doi.org/10.1049/el:19870770
Abstract
Novel vertical Hall cells which detect the magnetic field parallel to the chip surface were developed using the standard bipolar technology. In the devices, an n+ buried layer makes a vertical current flow and introduces the sensitivity parallel to the chip surface. A sensitivity of 75 V/AT was measured.Keywords
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