Low-pressure photochemical vapour deposition of silicon dioxidel on InP substrates

14 April 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (8) , 488-489
https://doi.org/10.1049/el:19880331

Abstract

Silicon dioxide films deposited on InP substrates are obtained from a mixture of silane and oxygen gases irradiated with a UV lamp. Deposition rates compatible with industrial processes are obtained for substrate temperatures well below the degradation threshold of InP. Optical and electrical characterisations are performed for InP MISFET applications.

Keywords

MISFET APPLICATIONS
INP SUBSTRATES
ELECTRICAL CHARACTERISATIONS
SUBSTRATE TEMPERATURES
PHOTOCHEMICAL VAPOUR DEPOSITION
PHOTODEPOSITION RATE
UV LAMP IRRADIATION
CVD
SIO2-INP
III-V SEMICONDUCTORS
IR ABSORPTION SPECTRUM
LOW-PRESSURE

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