Epitaxial Growth of SiC on Sapphire Substrates with an AlN Buffer Layer
- 1 February 1994
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 141 (2) , 510-513
- https://doi.org/10.1149/1.2054756
Abstract
Temperature dependence of minority‐carrier recombination lifetime in n‐type Czochralski silicon wafers revealed the presence of metastable recombination centers located near the wafer surface. It is found that they are affected by the crystal pulling rate and the chemical surface treatment. The grown‐in defects which strongly depend on the pulling rate, can contribute to the metastable surface centers.Keywords
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