Low coverage deposition of alkali metals on GaAs(110)
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 264-270
- https://doi.org/10.1016/0169-4332(92)90245-s
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- From synchrotron radiation to I-V measurements of GaAs schottky barrier formationApplied Surface Science, 1990
- Photoemission study of alkali/GaAs(110) interfacesZeitschrift für Physik B Condensed Matter, 1989
- Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfacesPhysical Review B, 1988
- Correlation betweenpinning and development of metallic character in Ag overlayers on GaAs(110)Physical Review Letters, 1988
- Formation of Schottky barrier at the Tm/GaAs(110) interfacePhysical Review Letters, 1988
- Initial stages of Schottky barrier formation: Temperature effectsJournal of Vacuum Science & Technology B, 1987
- Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110)Journal of Vacuum Science and Technology, 1979
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- The metal-semiconductor interface: Si (111) and zincblende (110) junctionsJournal of Physics C: Solid State Physics, 1977
- Theory of Surface StatesPhysical Review B, 1965