Thermally stimulated current trap in GaN

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Abstract
A thermally stimulated current peak, occurring at 100 K for a heating rate of 0.4 K/s, has been found in semi-insulating GaN grown by molecular beam epitaxy. This peak has contributions from two traps, with the main trap described by the following parameters: emission thermal activation energy E≂90±2 meV, effective capture cross-section σ≂3±1×10−22 cm−2, and Nμτ≂3±1 × 1014 cm−1 V −1, where N is the trap concentration, μ the mobility, and τ the free-carrier lifetime. This trap is much deeper than the typical shallow donors in conducting GaN, but shallower than any of the centers reported in recent deep level transient spectroscopy measurements.

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