Real-time heat capacity measurement during thin-film deposition by scanning nanocalorimetry
- 11 November 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (20) , 3801-3803
- https://doi.org/10.1063/1.1520714
Abstract
The scanning nanocalorimetry technique is utilized to characterize thin-film growth in real-time. The technique generates three-dimensional heat capacity data as a function of temperature and thickness that show the continuous change of indium film during deposition. The measurement interval is ∼4×10−3 nm in thickness. Indium thin films form nanoparticles on silicon nitride surfaces that show the phenomena of melting point depression and the formation of magic number size particles. The measured increment of the heat capacity ΔCp is ∼30 pJ/K and the temperature resolution is better than 0.5 K.Keywords
This publication has 12 references indexed in Scilit:
- The use of in situ X-ray diffraction, optical scattering and resistance analysis techniques for evaluation of copper diffusion barriers in blanket films and damascene structuresThin Solid Films, 2001
- Discrete Periodic Melting Point Observations for Nanostructure EnsemblesPhysical Review Letters, 2000
- Size-dependent melting point depression of nanostructures: Nanocalorimetric measurementsPhysical Review B, 2000
- In situ spectroscopic ellipsometry as a surface-sensitive tool to probe thin film growthThin Solid Films, 1999
- Enhanced thermal stability of C49 TiSi2 in the presence of aluminumApplied Physics Letters, 1998
- Melting of Pb nanocrystalsPhysical Review B, 1998
- Equilibrium shapes and energetics of iridium clusters on Ir(111)Surface Science, 1997
- Heat capacity measurements of Sn nanostructures using a thin-film differential scanning calorimeter with 0.2 nJ sensitivityApplied Physics Letters, 1997
- Size-Dependent Melting Properties of Small Tin Particles: Nanocalorimetric MeasurementsPhysical Review Letters, 1996
- Silicon epitaxy at 230 °C by reactive dc magnetron sputtering and its in situ ellipsometry monitoringApplied Physics Letters, 1991