Interface structure and Schottky barriers of epitaxial Pb on Si(111)
- 1 January 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 48-49, 209-214
- https://doi.org/10.1016/0169-4332(91)90332-e
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfacesPhysical Review Letters, 1990
- Mechanisms of barrier formation in schottky contacts: Metal-induced surface and interface statesApplied Surface Science, 1990
- Synchrotron radiation investigation and surface spectroscopy studies of prototypical systems: Lead-semiconductor interfacesApplied Surface Science, 1990
- THE RELATIONSHIP BETWEEN THE METASTABLE AND STABLE PHASES OF Pb/Si (111)Le Journal de Physique Colloques, 1989
- Electronic structure and Schottky-barrier heights of (111)/Si A- and B-type interfacesPhysical Review Letters, 1989
- Schottky Barrier Heights and the Continuum of Gap StatesPhysical Review Letters, 1984
- Determination of the Fermi-level pinning position at Si(111) surfacesPhysical Review B, 1983
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Theory of Surface StatesPhysical Review B, 1965
- Halbleitertheorie der SperrschichtThe Science of Nature, 1938