In situ x-ray diffraction study of the role of annealing ambient in epitaxial CoSi2 growth from Co/Ti bilayers on Si(001)
- 11 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (11) , 1597-1599
- https://doi.org/10.1063/1.114951
Abstract
The reactions during annealing of a Co/Ti bilayer structure on Si(001) were studied in situ to reveal the roles of the Ti interlayer and the annealing ambient on the formation of epitaxial CoSi2. We shown that an oxygen contaminant in the nitrogen annealing gas is needed to form a stable, Co–Ti–O (spinel) membrane at the metal/Si interface that limits diffusion and is crucial for the perfection of epitaxial CoSi2. Annealing in vacuum or otherwise inert environments led to polycrystalline CoSi2 films and no spinel phase.Keywords
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