Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD
- 20 April 1987
- conference paper
- Published by SPIE-Intl Soc Optical Eng
- Vol. 796, 182-187
- https://doi.org/10.1117/12.941015
Abstract
This paper reports some new experimental results concerning InP epitaxy by LP-MOCVD using chemical angle polishing and a sensitive etching technique to characterize the defect morphology of the complete InP layer, interface and substrate. The distribution of defects is associated with the SIMS determined As and Ga content.Keywords
This publication has 0 references indexed in Scilit: