Laser annealing of boron-implanted silicon
- 1 February 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (3) , 139-141
- https://doi.org/10.1063/1.89959
Abstract
The properties of boron‐implanted silicon annealed by high‐power Q‐switched ruby laser radiation are compared with results obtained by conventional thermal annealing. Laser annealing of the implanted layer results in significantly increased electrical activity, as compared to thermally annealed implanted silicon. This correlates well with transmission electron microscopy and ion‐channeling measurements which show a dramatic removal of displacement damage as a result of laser annealing. A substantial redistribution of the implanted boron concentration profile occurs after laser annealing which cannot be explained by thermal diffusion in the solid.Keywords
This publication has 4 references indexed in Scilit:
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- Disorder produced by high-dose implantation in SiApplied Physics Letters, 1976
- Diffusion of Boron from Shallow Ion Implants in SiliconJournal of the Electrochemical Society, 1972
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969