A 64-bit 800-MHz insulated-gate CCD on InP
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (12) , 680-682
- https://doi.org/10.1109/EDL.1986.26518
Abstract
Sixty-four-bit 259-gate insulated gate buried-channel charge-coupled devices (CCD's) have been fabricated on semi-insulating InP using a planar ion implantation process. These 5-µm gate-length structures, exercised with sinusoidal clocks, have operated to a measurement-limited upper frequency of 800 MHz and exhibited average effective stored charge per unit area in their channels as high as 6 × 1012electrons cm-2. Input-to-output delay-time measurements as a function of frequency clearly indicate proper CCD operation.Keywords
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