Electrical properties of nanometer-scale Si p+-n junctions fabricated by low energy Ga+ focused ion beam implantation
- 1 September 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (5) , 2718-2721
- https://doi.org/10.1116/1.585679
Abstract
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