The influence of donor neutralization on the transfer characteristics of MODFET's at 77 K: Theory and experiment
- 1 March 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (3) , 713-716
- https://doi.org/10.1109/t-ed.1985.22004
Abstract
Calculations and experiments on GaAs/AlGaAs MODFET's at 77 K show that due to neutralization of the relatively deep donors an increase in gate voltage will neither increase the two-dimensional electron concentration nor introduce free electrons into the AlGaAs for some range of gate voltages. The corresponding leveling off of drain saturation current is more pronounced in depletion- than in enhancement-mode devices.Keywords
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